Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
نویسندگان
چکیده
منابع مشابه
Photoluminescence characteristics of Cd1-xMnxTe single crystals grown by the vertical Bridgman method
In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 1999
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)01100-2